All-optical characterization of single femtosecond laser-pulse-induced amorphization in silicon

被引：53

作者：

Bonse, J. ^{[1
]}

机构：

[1] CSIC, Inst Opt, E-28006 Madrid, Spain

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2006年 / 84卷 / 1-2期

关键词：

D O I：

10.1007/s00339-006-3583-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The non-destructive optical imaging method of scanning laser microscopy has been used to evaluate quantitatively the thickness of an amorphous layer induced by a single, spatially Gaussian-shaped 130-fs Ti:sapphire laser pulse on n-doped single-crystalline [111]-silicon wafers for laser fluences between melting and ablation threshold. A parabolic thickness profile exhibiting a maximum value of approximately 60 nm has been found for fluences of 80% of the ablation threshold value by means of scanning laser microscopy in combination with a thin film optical model. This suggests that the melt and the amorphous layer thickness are linearly related to each other.

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页码：63 / 66

页数：4

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