TRANSIENT ANNEALING OF SEMICONDUCTORS BY LASER, ELECTRON-BEAM AND RADIANT HEATING TECHNIQUES

被引：48

作者：

CULLIS, AG

机构：

来源：

REPORTS ON PROGRESS IN PHYSICS | 1985年 / 48卷 / 08期

关键词：

D O I：

10.1088/0034-4885/48/8/002

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1155 / 1233

页数：79

共 545 条

[1] INTERFERENCE EFFECTS ON THE SURFACE OF ND - YAG-LASER-REACTED PD-SILICIDE [J].

AFFOLTER, K ;

LUTHY, W ;

WITTMER, M .

APPLIED PHYSICS LETTERS, 1980, 36 (07) :559-561

[2] ELECTRICAL-PROPERTIES OF LASER ANNEALED AUGE-GAAS OHMIC CONTACTS [J].

AINA, O ;

KATZ, W ;

ROSE, K .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (11) :6997-7001

[3]

AIZAKI N, 1984, APPL PHYS LETT, V44, P686, DOI 10.1063/1.94878

[4]

Algazin Yu. B., 1978, Optics and Spectroscopy, V45, P183

[5]

Anderson C. L., 1982, Laser and Electron Beam Interactions with Solids. Proceedings of the Materials Research Society Annual Meeting, P653

[6]

ANDERSON CL, 1980, LASER ELECTRON BEAM, P334

[7] FAST CRYSTALLIZATION AND VOID PRECIPITATION IN LASER-PULSE ANNEALING OF THIN GERMANIUM FILMS [J].

ANDREW, R ;

LOVATO, M .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (02) :1142-1144

[8] PHASE-TRANSITIONS IN COMPOUND SEMICONDUCTOR-FILMS TRIGGERED BY LASER IRRADIATION [J].

ANDREW, R ;

BAUFAY, L ;

PIGEOLET, A ;

LAUDE, LD .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (07) :4862-4865

[9]

ANTONENKO AK, 1976, SOV PHYS SEMICOND+, V10, P81

[10] MODELS FOR COMPUTER-SIMULATION OF COMPLETE IC FABRICATION PROCESS [J].

ANTONIADIS, DA ;

DUTTON, RW .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) :490-500

← 1 2 3 4 5 6 7 8 9 10 →