Fabrication of out-of-plane curved surfaces in Si by utilizing RIE lag

被引：39

作者：

Chou, TKA ^{[1
]}

Najafi, K ^{[1
]}

机构：

[1] Univ Michigan, Dept Elect Engn & Comp Sci, Ctr Wireless Integrated MicroSyst, Ann Arbor, MI 48109 USA

来源：

FIFTEENTH IEEE INTERNATIONAL CONFERENCE ON MICRO ELECTRO MECHANICAL SYSTEMS, TECHNICAL DIGEST | 2002年

关键词：

MEMS; curved surface; RIE lag;

D O I：

10.1109/MEMSYS.2002.984225

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper reports the development of a batch-fabrication technology for constructing out-of-plane curved surfaces in silicon using a single masking and etching step. With the well-characterized Deep Reactive Ion Etch (DRIE) lag effect in silicon, one can create an arbitrary out-of-plane curved profile by adjusting the trench etch openings. By using trenches ranging from 2mum to 50mum wide, a smooth curved surface (1200mumx1200mum) with maximum depth more than 15mum has been fabricated. The proposed technology is especially attractive for the fabrication of electrostatic MEMS actuators. A test curved drive electrode for vertical electrostatic actuators is also fabricated.

引用

页码：145 / 148

页数：4

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Chou TKA, 2001, TRANSDUCERS '01: EUROSENSORS XV, DIGEST OF TECHNICAL PAPERS, VOLS 1 AND 2, P890

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