Effect of fictive temperature on medium range order in v-SiO2

被引:16
作者
Chemarin, C
Champagnon, B
Panczer, G
机构
[1] Lab. Phys.-Chim. Mat. Luminescents, U.M.R. 5620, Univ. Claude Bernard Lyon 1, 69622 Villeurbanne Cedex
关键词
D O I
10.1016/S0022-3093(97)00177-4
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The first-order Raman spectra of vitreous SiO2 between 10 and 650 cm(-1) have been measured as a function of sample fictive temperature, T-F, achieved by laser quenching. The changes observed in the high frequency range of the spectra, > 100 cm(-1), which is related to the short range order, are correlated with the shift of the 'Boson peak' (BP) which is present in the low frequency range, < 100 cm(-1), and characteristic of the medium-range order. Based on the non-continuous glassy structure model, these observations are attributed to a decrease in the size of domains, associated with a modification of the Si-O-Si angle distribution, with the increase of T-F. (C) 1997 Elsevier Science B.V.
引用
收藏
页码:111 / 115
页数:5
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