Photoreflectance of GaSb/Al0.4Ga0.6Sb single quantum wells

被引：8

作者：

Geddo, M

Ferrini, R

Patrini, M

Franchi, S

Baraldi, A

Magnanini, R

机构：

[1] Univ Pavia, Dipartimento Fis A Volta, INFM, I-27100 Pavia, Italy

[2] CNR MASPEC, I-43100 Parma, Italy

[3] Univ Parma, Dipartimento Fis, INFM, I-43100 Parma, Italy

来源：

APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 09期

关键词：

D O I：

10.1063/1.122143

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report a photoreflectance study conducted in the 0.7-1.2 eV photon energy range and at temperatures from 80 to 300 K of GaSb/Al0.4Ga0.6Sb single quantum wells grown by molecular beam epitaxy. We observed clear and well-resolved structures, which could be attributed to the interband optical transitions originating in both the GaSb buffer and the quantum wells, and which could be fitted by standard critical-point line shapes. Our results demonstrate that even unintentionally doped GaSb-based quantum systems can be studied and characterized by photoreflectance, especially at low temperatures. (C) 1998 American Institute of Physics, [S0003-6951(98)00235-6].

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页码：1254 / 1256

页数：3

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