Performance of molecular resist based on polyphenol in EUV lithography

被引：28

作者：

Oizumi, Hiroaki

Kumasaka, Fumiaki

Tanaka, Yuusuke

Hirayama, Taku

Shiono, Daiju

Hada, Hideo

Onodera, Junichi

Yamaguchi, Atsuko

Nishiyama, Iwao

机构：

[1] NTT Atsugi R&D Ctr, EUV Proc Technol Res Lab, ASET, Atsugi, Kanagawa 2430198, Japan

[2] Tokyo Ohka Kogyo Co Ltd, New Technol Dev Sect, Kanagawa 2530114, Japan

[3] Hitachi Ltd, Cent Res Lab, Kokubunji, Tokyo 1858601, Japan

来源：

MICROELECTRONIC ENGINEERING | 2006年 / 83卷 / 4-9期

关键词：

EUV lithography (EUVL); molecular resist; polyphenol; line-edge roughness (LER);

D O I：

10.1016/j.mee.2006.01.025

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This study examined the ultimate fine-pitch patterning performance in EUV lithography (EUVL) of a chemically amplified (CA) positive-tone resist based on low-molecular-weight amorphous polyphenol. This advanced resist is composed of the low-molecular-weight protected polyphenol 4,4'-methylenebis[2-[di(2-mehtyl-4-hydroxy-5-alkyl)methyl]phenol] (MBSA2), a photochemical acid generator (PAG), and a quencher. Imaging experiments were performed using the high-numerical-aperture (NA = 0.3), small-field EUV exposure tool (HINA) and coherent illumination (sigma = 0.0). Patterning results showed the resolution of the resist to be 30 nm at an EUV exposure dose of 10 mJ/cm(2), and the line-edge roughness (LER) to be small, with 3 alpha being 6.3 nm for 50 nm line-and-space patterns and an inspection length, L, of 2000 run. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：1107 / 1110

页数：4

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