Contacts to p-type ZnMgO

被引：38

作者：

Kim, S ^{[1
]}

Kang, BS

Ren, F

Heo, YW

Ip, K

Norton, DP

Pearton, SJ

机构：

[1] Univ Florida, Dept Chem Engn, Gainesville, FL 32611 USA

[2] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA

来源：

APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 11期

关键词：

D O I：

10.1063/1.1669082

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ohmic and Schottky contacts to p-type Zn0.9Mg0.1O are reported. The lowest specific contact resistivity of 3x10(-3) Omega cm(2) was obtained for Ti/Au annealed at 600 degreesC for 30 s. Ni/Au was less thermally stable and showed severe degradation of contact morphology at this annealing temperature. Both Pt and Ti with Au overlayers showed rectifying characteristics on p-ZnMgO, with barrier heights of similar to0.55-0.56 eV and ideality factors of similar to1.9. Comparison of these results with the same metals on n-type ZnO indicates that high surface state densities play a significant role in determining the effective barrier height. (C) 2004 American Institute of Physics.

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页码：1904 / 1906

页数：3

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