On the crystallization kinetics of solutions deposited PZT thin films

被引:25
作者
Es-Souni, M [1 ]
Piorra, A [1 ]
机构
[1] Univ Appl Sci, Inst Mat & Surface Technol, D-24149 Kiel, Germany
关键词
thin films; chemical solution deposition; electron microscopy; X-ray diffraction; microstructure; dielectric properties;
D O I
10.1016/S0025-5408(01)00753-X
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The crystallization kinetics of strongly textured (100)-PZT thin films on highly textured (1 1 1)-Pt have been investigated in the temperature range from 550 to 700 degreesC. It is shown that the crystallization proceeds by the formation of globular, Zr-depleted, and Pb-rich particles that show necklace patterns. The crystallization kinetics can be described by an Avrami type analysis with a rate exponent of 1.3 and an activation energy of 141 kJ/mol. The relative dielectric constant depends strongly on the firing temperature and time, and ranges from 650 to 4000. (C) 2001 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码:2563 / 2575
页数:13
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