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Investigation of temperature-dependent characteristics of an n+-InGaAs/n-GaAs composite doped channel HFET

被引：39
作者：
Liu, WC
Yu, KH
Liu, RC
Lin, KW
Lin, KP
Yen, CH
Cheng, CC
Thei, KB
机构：
[1] Natl Cheng Kung Univ, Dept Elect Engn, Inst Microelect, Tainan 70101, Taiwan
[2] Chung Shan Inst Sci & Technol, Tao Yuan 325, Taiwan
[3] Chien Kuo Inst Technol, Dept Elect Engn, Changhua 50045, Taiwan
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2001年 / 48卷 / 12期
关键词：
composite doped channel (CDC); leakage; off-state; temperature dependence;
D O I：
10.1109/16.974689
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The temperature-dependent characteristics of an n(+) -InGaAs/n-GaAs composite doped channel (CDC) heterostructure field-effect transistor (HFET) have been studied. Due to the reduction of leakage current and good carrier confinement in the n(+) -InGaAs/n-GaAs CDC structure, the degradation of device performances with increasing the temperature is insignificant. Experimentally, for a 1 X 100 mum(2) device, the gate-drain breakdown voltage of 24.5 (22.0) V, turn-on voltage of 2.05 (1.70) V, off-state drain-source breakdown voltage of 24.4 (18.7) V, transconductance of 161 (138) mS/mm, output conductance of 0.60 (0.60) mS/mm, and voltage gain of 268 (230) are obtained at 300 (450) K, respectively. The shift of V-th from 300 to 450 K is only 13 mV. In addition, the studied device also shows good microwave performances with flat and wide operation regime.
引用
收藏
页码：2677 / 2683
页数：7
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