DESIGN AND CHARACTERISTICS OF INGAAS/INP COMPOSITE-CHANNEL HFETS

被引：68

作者：

ENOKI, T ^{[1
]}

ARAI, K ^{[1
]}

KOHZEN, A ^{[1
]}

ISHII, Y ^{[1
]}

机构：

[1] NIPPON TELEGRAPH & TEL PUBL CORP, OPTOELECTR LABS, KANAGAWA 24301, JAPAN

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1995年 / 42卷 / 08期

关键词：

D O I：

10.1109/16.398656

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A design for composite-channel structures consisting of an InGaAs channel and an InP subchannel for use as heterostructure field-effect transistors is presented for the first time. This novel channel structure takes advantage of both the high drift velocity and low impact ionization of InP at high electric fields as well as the high electron mobility of InGaAs at low electric fields. It is shown that the doping density of the InP subchannel is the key parameter to realize the advantages of the composite channel. A very high transconductance of 1.29 S/mm and a current gain cutoff frequency of 68.7 GHz are achieved with 0.6- and 0.7-mu m gates, respectively. The average velocity of electrons in the composite channel is 2.9 x 10(7) cm/s. The devices have no kink phenomena in their I-V characteristics possibly due to low impact ionization in the InP subchannel.

引用

页码：1413 / 1418

页数：6

共 16 条

[1] 0.33-MU-M GATE-LENGTH MILLIMETER-WAVE INP-CHANNEL HEMTS WITH HIGH FT AND FMAX [J].

AINA, L ;

BURGESS, M ;

MATTINGLY, M ;

OCONNOR, JM ;

MEERSCHAERT, A ;

TONG, M ;

KETTERSON, A ;

ADESIDA, I .

IEEE ELECTRON DEVICE LETTERS, 1991, 12 (09) :483-485

[2] W-BAND LOW-NOISE INALAS INGAAS LATTICE-MATCHED HEMTS [J].

CHAO, PC ;

TESSMER, AJ ;

DUH, KHG ;

HO, P ;

KAO, MY ;

SMITH, PM ;

BALLINGALL, JM ;

LIU, SMJ ;

JABRA, AA .

IEEE ELECTRON DEVICE LETTERS, 1990, 11 (01) :59-62

[3] REAL SPACE HOT-ELECTRON DISTRIBUTIONS AND TRANSFER EFFECTS IN HETEROSTRUCTURES [J].

CHO, Y ;

SAKAMOTO, R ;

INOUE, M .

SOLID-STATE ELECTRONICS, 1988, 31 (3-4) :325-328

[4] DELAY TIME ANALYSIS FOR 0.4-MUM TO 5-MUM-GATE INALAS-INGAAS HEMTS [J].

ENOKI, T ;

ARAI, K ;

ISHII, Y .

IEEE ELECTRON DEVICE LETTERS, 1990, 11 (11) :502-504

[5]

ENOKI T, 1991, INDIUM PHOSPHIDE AND RELATED MATERIALS : THIRD INTERNATIONAL CONFERENCE, VOLS 1 AND 2, P371, DOI 10.1109/ICIPRM.1991.147393

[6]

ENOKI T, 1992, 4TH IEEE P INT C INP, P371

[7]

HONG WP, 1991, 49TH IEEE ANN DEV RE

[8] ANALYSIS OF KINK CHARACTERISTICS IN SILICON-ON-INSULATOR MOSFETS USING 2-CARRIER MODELING [J].

KATO, K ;

WADA, T ;

TANIGUCHI, K .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (02) :458-462

[9] KINK EFFECT IN SUBMICROMETER-GATE MBE-GROWN INALAS/INGAAS/INALAS HETEROJUNCTION MESFETS [J].

KUANG, JB ;

TASKER, PJ ;

WANG, GW ;

CHEN, YK ;

EASTMAN, LF ;

AINA, OA ;

HIER, H ;

FATHIMULLA, A .

IEEE ELECTRON DEVICE LETTERS, 1988, 9 (12) :630-632

[10]

Kuo J. M., 1986, International Electron Devices Meeting 1986. Technical Digest (Cat. No.86CH2381-2), P460

← 1 2 →