High-mobility, sputtered films of indium oxide doped with molybdenum

Thin films of molybdenum-doped indium oxide, an n-type transparent conducting oxide, were deposited on glass substrates by a large-area deposition technique, radio-frequency magnetron sputtering, and their electrical properties were examined. Molybdenum content was varied from 1 to 4 wt%, and the highest mobility achieved was 83 cm(2) V-1 s(-1) at a carrier concentration of 3.0x10(20) cm(-3) without any postdeposition treatment for one of the films made from the target with 2 wt% Mo. Temperature-dependent Hall analysis indicated that this high mobility is limited by phonon scattering, whereas the method of four coefficients analysis showed that the conduction band is parabolic. (C) 2004 American Institute of Physics.