Extension mechanism of antiphase-boundaries in CuPtB-type ordered GaInP2 and (Al,Ga)InP2 epitaxial layers

被引：10

作者：

Takeda, S

Kuno, Y

Hosoi, N

Shimoyama, K

机构：

[1] Osaka Univ, Grad Sch Sci, Dept Phys, Toyonaka, Osaka 5600043, Japan

[2] Mitsubishi Chem Co, Optoelect Res & Technol Dev Ctr, Ushiku, Ibaraki 30012, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 1999年 / 205卷 / 1-2期

关键词：

metal organic vapor-phase epitaxy; ordered structures; antiphase boundaries; aluminum gallium phosphorous; aluminum gallium indium phosphorous; electron microscopy;

D O I：

10.1016/S0022-0248(99)00230-4

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We observe the antiphase boundaries (APBs) in the ordered CuPt B-type GaInP2 and (AI,Ga)InP2 layers grown on a vicinal GaAs(0 0 1) substrate by means of postgrowth transmission electron microscopy. We conclude that APBs are active sites for nucleation of two-dimensional (2D) islands on the terraces of vicinal surfaces. Growth on these surface is otherwise dominated by step flow growth. The growth (by step flow) and collision of this 2D island with a normal step extend the APBs in a direction inclined to the normal growth direction. (C) 1999 Elsevier Science B.V. All rights reserved.

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页码：11 / 19

页数：9

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