Determination of the effective mass of GaN from infrared reflectivity and Hall effect

被引：141

作者：

Perlin, P

LitwinStaszewska, E

Suchanek, B

Knap, W

Camassel, J

Suski, T

Piotrzkowski, R

Grzegory, I

Porowski, S

Kaminska, E

Chervin, JC

机构：

[1] POLISH ACAD SCI, HIGH PRESSURE RES CTR, UNIPRESS, PL-01442 WARSAW, POLAND

[2] UNIV WARSAW, INST PHYS EXPTL, WARSAW, POLAND

[3] UNIV MONTPELLIER 2, ETUD SEMICOND GRP, URA CNRS 357, F-34095 MONTPELLIER, FRANCE

[4] INST ELECTRON TECHNOL, PL-02668 WARSAW, POLAND

[5] UNIV PARIS 06, F-75252 PARIS 05, FRANCE

来源：

APPLIED PHYSICS LETTERS | 1996年 / 68卷 / 08期

关键词：

D O I：

10.1063/1.115730

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Infrared reflectivity and Hall effect measurements were performed on highly conducting n-type GaN (n approximate to 6X10(19) cm(-3)) bulk crystals grown by the high-pressure high-temperature method, Values of electron-plasma frequency and free-electron concentration were determined for each sample of the set of seven crystals. It enabled us to calculate the perpendicular effective mass of electrons in the wurtzite structure of GaN as m*=0.22+/-0.02 m(0). Effects of nonparabolicity and a difference between parallel and perpendicular components of the effective mass are small and do not exceed the experimental error. (C) 1996 American Institute of Physics.

引用

页码：1114 / 1116

页数：3

共 14 条

[1] INFRARED LATTICE-VIBRATIONS AND FREE-ELECTRON DISPERSION IN GAN [J].