Dynamic range of ultrabroadband terahertz detection using GaAs photoconductors

被引：9

作者：

Hussain, A ^{[1
]}

Andrews, SR ^{[1
]}

机构：

[1] Univ Bath, Dept Phys, Bath BA2 7AY, Avon, England

来源：

APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 14期

基金：

英国工程与自然科学研究理事会;

关键词：

D O I：

10.1063/1.2193427

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Electromagnetic transients with frequency components spanning the far and midinfrared are coherently detected by means of the polarization current induced in an electron-hole plasma optically excited in As implanted GaAs. The impulse response is governed by the frequency dependence of the photocarrier mobility and density and the lattice contribution to the dielectric constant. Compared with electro-optic sampling using thin ZnTe crystals, photoconductive detection can yield a comparable or greater dynamic range up to 40 THz. (c) 2006 American Institute of Physics.

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页数：3

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