Planar native-oxide-based AlGaAs-GaAs-InGaAs quantum well microdisk lasers

被引：13

作者：

Ries, MJ ^{[1
]}

Chen, EI ^{[1
]}

Holonyak, N ^{[1
]}

Iovino, GM ^{[1
]}

Minervini, AD ^{[1
]}

机构：

[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

来源：

APPLIED PHYSICS LETTERS | 1996年 / 68卷 / 11期

关键词：

D O I：

10.1063/1.115692

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Data are presented on the 300 K photopumped (pulsed) laser operation of ultrathin (similar to 0.15 mu m) planar microdisk lasers. The tiny lasers employ the wet oxidation of an AlGaAs layer beneath the disks to form semiconductor cavities that are in solid contact but optically isolated from the GaAs substrate. The resulting microcavity lasers operate at low pump intensities and exhibit spectra characteristic of whispering gallery mode microdisk lasers. (C) 1996 American Institute of Physics.

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页码：1540 / 1542

页数：3

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