Carrier mobilities and influence of oxygen in C60 films

被引：93

作者：

Könenkamp, R ^{[1
]}

Priebe, G ^{[1
]}

Pietzak, B ^{[1
]}

机构：

[1] Hahn Meitner Inst Kernforsch Berlin GmbH, D-14109 Berlin, Germany

来源：

PHYSICAL REVIEW B | 1999年 / 60卷 / 16期

关键词：

D O I：

10.1103/PhysRevB.60.11804

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have studied the intermolecular carrier transport in C-60 films. Photoelectrical and optical experiments indicate charge transfer transitions to set in at photon energies of similar to 2.2 eV. The electron transport in the charge transfer state is by hopping with typical drift mobilities of 1 cm(2)/V s in as-grown films. Hole drift mobilities are in the 10(-4)cm(2)/V s range. Upon oxygen exposure the carrier mobilities decrease significantly, while recombination lifetimes grow. These findings are interpreted as being due to transport-limited recombination kinetics. [S0163-1829(99)02539-4].

引用

页码：11804 / 11808

页数：5

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