TIME-RESOLVED CARRIER RELAXATION IN SOLID C-60 THIN-FILMS

被引：111

作者：

CHEVILLE, RA ^{[1
]}

HALAS, NJ ^{[1
]}

机构：

[1] RICE UNIV,RICE QUANTUM INST,HOUSTON,TX 77251

来源：

PHYSICAL REVIEW B | 1992年 / 45卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.45.4548

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The time dependence of the carrier relaxation in undoped solid C60 thin films has been studied by monitoring changes in the optical transmission upon photoexcitation at the HOMO-LUMO band edge. The relaxation closely follows a Kohlrausch-Williams-Watts decay with an exponent of beta = 0.4. This functional form is typical of carrier relaxation associated with states of localized rather than extended character. In addition, we observe this relaxation behavior to be independent of temperature, which indicates that a hopping mechanism may be important in the carrier recombination process in solid C60.

引用

页码：4548 / 4550

页数：3

共 30 条

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