Internal quantum efficiency and nonradiative recombination coefficient of GaInN/GaN multiple quantum wells with different dislocation densities

被引：251

作者：

Dai, Q. ^{[1
,2
]}

Schubert, M. F. ^{[1
,2
]}

Kim, M. H. ^{[1
,2
]}

Kim, J. K. ^{[1
,2
]}

Schubert, E. F. ^{[1
,2
]}

Koleske, D. D. ^{[3
]}

Crawford, M. H. ^{[3
]}

Lee, S. R. ^{[3
]}

Fischer, A. J. ^{[3
]}

Thaler, G. ^{[3
]}

Banas, M. A. ^{[3
]}

机构：

[1] Rensselaer Polytech Inst, Dept Phys Appl Phys & Astron, Troy, NY 12180 USA

[2] Rensselaer Polytech Inst, Dept Elect Comp & Syst Engn, Troy, NY 12180 USA

[3] Sandia Natl Labs, Albuquerque, NM 87185 USA

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 11期

基金：

美国能源部;

关键词：

carrier density; dislocation density; gallium compounds; III-V semiconductors; indium compounds; nonradiative transitions; photoluminescence; semiconductor growth; semiconductor heterojunctions; semiconductor quantum wells; wide band gap semiconductors; GAN;

D O I：

10.1063/1.3100773

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Room-temperature photoluminescence (PL) measurements are performed on GaInN/GaN multiple-quantum-well heterostructures grown on GaN-on-sapphire templates with different threading-dislocation densities. The selective optical excitation of quantum wells and the dependence of integrated PL intensity on excitation power allow us to determine the internal quantum efficiency (IQE) as a function of carrier concentration. The measured IQE of the sample with the lowest dislocation density (5.3x10(8) cm(-2)) is as high as 64%. The measured nonradiative coefficient A varies from 6x10(7) to 2x10(8) s(-1) as the dislocation density increases from 5.3x10(8) to 5.7x10(9) cm(-2), respectively.

引用

页数：3

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