Optical constants of Bi2Te3 and Sb2Te3 measured using spectroscopic ellipsometry

被引:17
作者
Cui, H [1 ]
Bhat, IB
Venkatasubramanian, R
机构
[1] Rensselaer Polytech Inst, Dept Elect Comp & Syst Engn, Troy, NY 12180 USA
[2] Res Triangle Inst, Res Triangle Pk, NC 27709 USA
关键词
optical constants; spectroscopic ellipsometry; multiple sample analysis; Bi2Te3 and Sb2Te3;
D O I
10.1007/s11664-999-0247-z
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this work, we present the optical constants of bismuth telluride (Bi2Te3), and antimony telluride (Sb2Te3) determined using spectroscopic ellipsometry (SE). The spectral range of the optical constants is from 404 nm to 740 nm. Bi2Te3 and Sb2Te3 films with different thicknesses were grown by metalorganic chemical vapor deposition (MOCVD). Multiple sample analysis (MSA) technique was employed in order to eliminate the parameter correlation in the SE data analysis caused by the presence of the overalyer on top of Bi2Te3 and Sb2Te3 films. Optical constants and thicknesses for both Bi2Te3 and Sb2Te3 overlayers were also determined. Independent Bi2Te3 and Sb2Te3 samples were used to check the results obtained. In addition, SE analysis was performed on two Sb2Te3 samples after being etched in diluted NH4OH solution in order to characterize the overlayer and confirm the reliability of the results.
引用
收藏
页码:1111 / 1114
页数:4
相关论文
共 16 条
  • [1] GROWTH OF ALXGA1-XAS PARABOLIC QUANTUM-WELLS BY REAL-TIME FEEDBACK-CONTROL OF COMPOSITION
    ASPNES, DE
    QUINN, WE
    TAMARGO, MC
    PUDENZI, MAA
    SCHWARZ, SA
    BRASIL, MJSP
    NAHORY, RE
    GREGORY, S
    [J]. APPLIED PHYSICS LETTERS, 1992, 60 (10) : 1244 - 1246
  • [2] Azzam R., 1977, ELLIPSOMETRY POLARIZ
  • [3] DAKSHINAMURTHY S, 1995, J ELECT MAT, V24, P1087
  • [4] THERMOELECTRIC-POWER AND ELECTRICAL-RESISTIVITY OF CRYSTALLINE ANTIMONY TELLURIDE (SB2TE3) THIN-FILMS - TEMPERATURE AND SIZE EFFECTS
    DAS, VD
    SOUNDARARAJAN, N
    [J]. JOURNAL OF APPLIED PHYSICS, 1989, 65 (06) : 2332 - 2341
  • [5] DROOPAD R, 1994, J VAC SCI TECH B, V12, P1214
  • [6] Goldsmid H.J., 1986, Electronic Refrigeration
  • [7] INP OPTICAL-CONSTANTS BETWEEN 0.75 AND 5.0 EV DETERMINED BY VARIABLE-ANGLE SPECTROSCOPIC ELLIPSOMETRY
    HERZINGER, CM
    SNYDER, PG
    JOHS, B
    WOOLLAM, JA
    [J]. JOURNAL OF APPLIED PHYSICS, 1995, 77 (04) : 1715 - 1724
  • [8] DETERMINATION OF ALAS OPTICAL-CONSTANTS BY VARIABLE-ANGLE SPECTROSCOPIC ELLIPSOMETRY AND A MULTISAMPLE ANALYSIS
    HERZINGER, CM
    YAO, H
    SNYDER, PG
    CELII, FG
    KAO, YC
    JOHS, B
    WOOLLAM, JA
    [J]. JOURNAL OF APPLIED PHYSICS, 1995, 77 (09) : 4677 - 4687
  • [9] Ellipsometric determination of optical constants for silicon and thermally grown silicon dioxide via a multi-sample, multi-wavelength, multi-angle investigation
    Herzinger, CM
    Johs, B
    McGahan, WA
    Woollam, JA
    Paulson, W
    [J]. JOURNAL OF APPLIED PHYSICS, 1998, 83 (06) : 3323 - 3336
  • [10] USE OF THE BIASED ESTIMATOR IN THE INTERPRETATION OF SPECTROSCOPIC ELLIPSOMETRY DATA
    JELLISON, GE
    [J]. APPLIED OPTICS, 1991, 30 (23): : 3354 - 3360