GROWTH OF ALXGA1-XAS PARABOLIC QUANTUM-WELLS BY REAL-TIME FEEDBACK-CONTROL OF COMPOSITION

被引：97

作者：

ASPNES, DE ^{[1
]}

QUINN, WE ^{[1
]}

TAMARGO, MC ^{[1
]}

PUDENZI, MAA ^{[1
]}

SCHWARZ, SA ^{[1
]}

BRASIL, MJSP ^{[1
]}

NAHORY, RE ^{[1
]}

GREGORY, S ^{[1
]}

机构：

[1] UNIV CAMPINAS, IFGW, BR-13081 CAMPINAS, SP, BRAZIL

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 10期

关键词：

D O I：

10.1063/1.107419

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Epitaxial AlxGa1-xAs structures whose compositions x vary continuously with thickness according to a given input function have been grown by chemical-beam epitaxy under closed-loop ellipsometric control. 200- and 500-angstrom parabolic quantum wells analyzed by photoreflectance and secondary-ion mass spectrometry, respectively, show that actual compositions follow target values to within 0.02 in x. Growth of the 200-angstrom profile was controlled using compositions ellipsometrically determined for the outermost running 3.1 angstrom (approximately 1 monolayer) of depositing material.

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页码：1244 / 1246

页数：3

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