APPLICATION OF ELLIPSOMETRY TO CRYSTAL-GROWTH BY ORGANOMETALLIC MOLECULAR-BEAM EPITAXY

被引：108

作者：

ASPNES, DE

QUINN, WE

GREGORY, S

机构：

来源：

APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 25期

关键词：

D O I：

10.1063/1.102868

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the first use of ellipsometry as a real-time monitor of III-V semiconductor crystal growth by molecular beam epitaxy, specifically growth of GaAs and AlGaAs from arsine, triethylgallium, and triethylaluminum sources. Our results provide new insight into the oxide desorption process and show a sensitivity of ±0.03 in compositions x>0.2 for 10 Å thickness increments of AlxGa1-xAs during initial deposition on GaAs.

引用

页码：2569 / 2571

页数：3

共 15 条

[1] Aspnes D. E., 1976, OPTICAL PROPERTIES S, P799
[2] DIRECT OPTICAL MEASUREMENT OF SURFACE DIELECTRIC RESPONSES - INTERRUPTED GROWTH ON (001) GAAS
ASPNES, DE
CHANG, YC
STUDNA, AA
FLOREZ, LT
FARRELL, HH
HARBISON, JP
[J]. PHYSICAL REVIEW LETTERS, 1990, 64 (02) : 192 - 195
[3] OPTICAL-REFLECTANCE AND ELECTRON-DIFFRACTION STUDIES OF MOLECULAR-BEAM-EPITAXY GROWTH TRANSIENTS ON GAAS(001)
ASPNES, DE
HARBISON, JP
STUDNA, AA
FLOREZ, LT
[J]. PHYSICAL REVIEW LETTERS, 1987, 59 (15) : 1687 - 1690
[4] HIGH PRECISION SCANNING ELLIPSOMETER
ASPNES, DE
STUDNA, AA
[J]. APPLIED OPTICS, 1975, 14 (01): : 220 - 228
[5] OPTICAL-PROPERTIES OF THIN-FILMS
ASPNES, DE
[J]. THIN SOLID FILMS, 1982, 89 (03) : 249 - 262
[6] METHODS FOR DRIFT STABILIZATION AND PHOTOMULTIPLIER LINEARIZATION FOR PHOTOMETRIC ELLIPSOMETERS AND POLARIMETERS
ASPNES, DE
STUDNA, AA
[J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1978, 49 (03) : 291 - 297
[7] ASPNES DE, 1989, PLASMA DIAGNOSTICS, V2, P67
[8] ASPNES DE, 1988, SPIE P, V946, P112
[9] CLLLINS RW, 1989, J VAC SCI TECHNOL B, V7, P1155
[10] SPECTROSCOPIC ELLIPSOMETRY OF ULTRATHIN FILMS - FROM UV TO IR
DREVILLON, B
[J]. THIN SOLID FILMS, 1988, 163 : 157 - 166

← 1 2 →