Breakdown voltage in thin III-V avalanche photodiodes

被引：23

作者：

Saleh, MA ^{[1
]}

Hayat, MM

Kwon, OH

Holmes, AL

Campbell, JC

Saleh, BEA

Teich, MC

机构：

[1] Univ Dayton, Electroopt Program, Dayton, OH 45469 USA

[2] Univ New Mexico, Dept Elect & Comp Engn, Albuquerque, NM 87131 USA

[3] Univ Texas, Dept Elect & Comp Engn, Austin, TX 78712 USA

[4] Boston Univ, Dept Elect & Comp Engn, Boston, MA 02215 USA

来源：

APPLIED PHYSICS LETTERS | 2001年 / 79卷 / 24期

关键词：

D O I：

10.1063/1.1425463

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The dead-space multiplication theory of Hayat and Saleh [J. Lightwave Technol. 10, 1415 (1992)], in conjunction with the multiplication-width-independent ionization-coefficient model developed by Saleh [IEEE Trans. Electron Devices 47, 625 (2000)], are shown to accurately predict breakdown voltages for thin avalanche photodiodes of GaAs, InP, In0.52Al0.48As, and Al0.2Ga0.8As, over a broad range of device widths. The breakdown voltage is determined from the analytical expression for the impulse-response-function decay rate. (C) 2001 American Institute of Physics.

引用

收藏

页码：4037 / 4039

页数：3

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