Two-dimensional simulation of polymer field-effect transistor

被引：67

作者：

Tessler, N ^{[1
]}

Roichman, Y ^{[1
]}

机构：

[1] Technion Israel Inst Technol, Dept Elect Engn, IL-32000 Haifa, Israel

来源：

APPLIED PHYSICS LETTERS | 2001年 / 79卷 / 18期

关键词：

D O I：

10.1063/1.1415374

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A two-dimensional simulation of intrinsic top-contact field-effect transistor is presented. The simulated structure is unique to organic transistors and hence is most relevant. By time resolving the operation of such a transistor, the mechanisms underlying its operation are resolved. The effect of this device configuration on the measured "intrinsic" material properties is also discussed and shown to explain previously reported features. (C) 2001 American Institute of Physics.

引用

页码：2987 / 2989

页数：3

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