Resonant two-photon excitation of silicon nanocrystals

被引：9

作者：

Diener, J ^{[1
]}

Kovalev, DI ^{[1
]}

Polisski, G ^{[1
]}

Koch, F ^{[1
]}

机构：

[1] Tech Univ Munich, Dept Phys E16, D-85747 Garching, Germany

来源：

APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 22期

关键词：

D O I：

10.1063/1.123341

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have studied generation of visible photoluminescence (PL) in porous silicon (PSi) under resonant two-photon excitation. While the temporal decays of the resonant photoluminescence excited by one- and two-photon absorption are identical and show the same temperature dependence, the PL response differs significantly near the excitation energy. Contrary to one-photon excitation, no spectral gap between the excitation energy and the onset of the two-photon excited PL is observed. This is explained in the framework of selection rules for dipole allowed and forbidden optical exciton transitions in silicon nanocrystals. (C) 1999 American Institute of Physics. [S0003-6951(99)03022-3].

引用

页码：3350 / 3352

页数：3

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