EXPERIMENTAL AND THEORETICAL ASPECTS OF RADIATIVE PROCESSES IN POROUS SILICON

被引：13

作者：

FISHMAN, G

ROMESTAIN, R

VIAL, JC

机构：

[1] Laboratoire de Spectrométrie Physique, Université Joseph Fourier-Grenoble I, URA 08 CNRS, 38402 Saint Martin d'Heres Cedex

来源：

JOURNAL OF LUMINESCENCE | 1993年 / 57卷 / 1-6期

关键词：

D O I：

10.1016/0022-2313(93)90140-I

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We have measured the temperature dependence of the radiative lifetime between 4 and 300 K. This dependence is interpreted as due to the exchange splitting E(ex) = 10 meV of an electron-hole pair confined in a silicon crystaIlite for a luminescence wavelength equal to 0.7 mu m. Then we present a variational calculation taking into account the correlation of the electron-hole pair due to the Coulomb interaction. This leads us to conclude that the measured exchange splitting corresponds to a (spherical)crystallite of diameter 32 Angstrom.

引用

页码：235 / 238

页数：4

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