POROUS SILICON - MATERIAL PROPERTIES, VISIBLE PHOTOLUMINESCENCE AND ELECTROLUMINESCENCE

被引：57

作者：

BOMCHIL, G ^{[1
]}

HALIMAOUI, A ^{[1
]}

SAGNES, I ^{[1
]}

BADOZ, PA ^{[1
]}

BERBEZIER, I ^{[1
]}

PERRET, P ^{[1
]}

LAMBERT, B ^{[1
]}

VINCENT, G ^{[1
]}

GARCHERY, L ^{[1
]}

REGOLINI, JL ^{[1
]}

机构：

[1] UNIV JOSEPH FOURIER,F-38041 GRENOBLE,FRANCE

来源：

APPLIED SURFACE SCIENCE | 1993年 / 65-6卷

关键词：

D O I：

10.1016/0169-4332(93)90692-5

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Following the recent discovery of visible photo- and electroluminescence of high-porosity porous silicon layers this paper presents a review of the most relevant results and models proposed to explain the phenomena. Porous silicon fabrication techniques are presented including some recommendations to allow a meaningful comparison of results obtained by different laboratories. Recent results of pore size, surface area measurements, crystallographic structure determination and microstructure observations are discussed. Detailed studies of optical absorption coefficients of porous layers of different porosities are presented. A clear upshift toward the visible range is explained by a quantum confinement model. Intense visible photoluminescence of porous silicon layers is discussed on the ground of both quantum confinement and surface-controlled phenomena. The essential role played by surface passivation, for efficient luminescence, is analysed. Reported results of visible electroluminescence during anodic oxidation of porous silicon layers and visible light emission from solid-state porous silicon devices are reviewed.

引用

页码：394 / 407

页数：14

共 60 条

[1] DETERMINATION OF LATTICE-PARAMETER AND ELASTIC PROPERTIES OF POROUS SILICON BY X-RAY-DIFFRACTION [J].