DETERMINATION OF LATTICE-PARAMETER AND ELASTIC PROPERTIES OF POROUS SILICON BY X-RAY-DIFFRACTION

被引：212

作者：

BARLA, K ^{[1
]}

HERINO, R ^{[1
]}

BOMCHIL, G ^{[1
]}

PFISTER, JC ^{[1
]}

FREUND, A ^{[1
]}

机构：

[1] INST MAX VON LAUE PAUL LANGEVIN,F-38042 GRENOBLE,FRANCE

来源：

JOURNAL OF CRYSTAL GROWTH | 1984年 / 68卷 / 03期

关键词：

D O I：

10.1016/0022-0248(84)90111-8

中图分类号：

O7 [晶体学];

学科分类号：

070301 [无机化学];

摘要：

引用

页码：727 / 732

页数：6

共 13 条

[1]

X-RAY TOPOGRAPHIC CHARACTERIZATION OF POROUS SILICON LAYERS [J].

BARLA, K ;

BOMCHIL, G ;

HERINO, R ;

PFISTER, JC ;

BARUCHEL, J .

JOURNAL OF CRYSTAL GROWTH, 1984, 68 (03) :721-726

[2]

X-RAY DOUBLE-CRYSTAL DIFFRACTOMETRY OF GA1-XALXAS EPITAXIAL LAYERS [J].

BARTELS, WJ ;

NIJMAN, W .

JOURNAL OF CRYSTAL GROWTH, 1978, 44 (05) :518-525

[3]

EFFECTS OF HUMIDITY ON STRESS IN THIN SILICON DIOXIDE FILMS [J].

BLECH, I ;

COHEN, U .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (06) :4202-4207

[4]

PORE-SIZE DISTRIBUTION IN POROUS SILICON STUDIED BY ADSORPTION-ISOTHERMS [J].

BOMCHIL, G ;

HERINO, R ;

BARLA, K ;

PFISTER, JC .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (07) :1611-1614

[5]

PRECISION LATTICE CONSTANT DETERMINATION [J].

BOND, WL .

ACTA CRYSTALLOGRAPHICA, 1960, 13 (10) :814-818

[6]

DOUBLE-CRYSTAL SPECTROMETER MEASUREMENTS OF LATTICE-PARAMETERS AND X-RAY TOPOGRAPHY ON HETEROJUNCTIONS GAAS-ALXGA1-XAS [J].

ESTOP, E ;

IZRAEL, A ;

SAUVAGE, M .

ACTA CRYSTALLOGRAPHICA SECTION A, 1976, 32 (JUL1) :627-&

[7]

FREUND A, 1973, THESIS TU MUNCHEN

[8]

HORN FH, 1955, PHYS REV, V37, P1521

[9]

DETERMINATION OF LATTICE-CONSTANT OF EPITAXIAL LAYERS OF III-V COMPOUNDS [J].

HORNSTRA, J ;

BARTELS, WJ .

JOURNAL OF CRYSTAL GROWTH, 1978, 44 (05) :513-517

[10]

LATTICE MISMATCH AT INTERFACE IN GAP-GAP AND GAA1AS-GAAS EPITAXIAL-GROWTH [J].

KISHINO, S ;

OGIRIMA, M ;

KAJIMURA, T ;

KURATA, K .

JOURNAL OF CRYSTAL GROWTH, 1974, 24 (OCT) :266-271

← 1 2 →