Atomic scale heating in cathodic arc plasma deposition

被引:90
作者
Anders, A [1 ]
机构
[1] Univ Calif Berkeley, Lawrence Berkeley Lab, Berkeley, CA 94720 USA
关键词
Ions - Binding energy - Interfaces (materials) - Kinetics - Molecular physics - Secondary emission - Film growth - Deposition - Kinetic energy - Activation energy;
D O I
10.1063/1.1448390
中图分类号
O59 [应用物理学];
学科分类号
摘要
Energetic deposition using a filtered cathodic arc plasma is known to lead to very adherent and dense films. Interface mixing, subplantation depth, texture, and stress of the growing film are often studied as a function of the kinetic energy of condensing ions. Ions also have potential energy contributing to atomic scale heating, secondary electron emission, and potential sputtering, thereby affecting all film properties. We will show kinetic and potential energies of ions in cathodic arc plasmas. These energies are greater than the binding energy, surface binding energy, and activation energy of surface diffusion. The role of potential energy on film growth is not limited to the cathodic arc plasma deposition process. (C) 2002 American Institute of Physics.
引用
收藏
页码:1100 / 1102
页数:3
相关论文
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PHYSICA SCRIPTA, 2001, T92 :15-21