Band alignment of two-dimensional transition metal dichalcogenides: Application in tunnel field effect transistors

被引：707

作者：

Gong, Cheng ^{[1
]}

Zhang, Hengji ^{[2
]}

Wang, Weihua ^{[1
]}

Colombo, Luigi ^{[3
]}

Wallace, Robert M. ^{[1
,2
]}

Cho, Kyeongjae ^{[1
,2
]}

机构：

[1] Univ Texas Dallas, Dept Mat Sci & Engn, Richardson, TX 75080 USA

[2] Univ Texas Dallas, Dept Phys, Richardson, TX 75080 USA

[3] Texas Instruments Inc, Dallas, TX 75243 USA

来源：

APPLIED PHYSICS LETTERS | 2013年 / 103卷 / 05期

基金：

新加坡国家研究基金会;

关键词：

INTERFACIAL CHEMISTRY; GRAPHENE;

D O I：

10.1063/1.4817409

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Tunnel field effect transistors (TFETs) based on vertical stacking of two dimensional materials are of interest for low-power logic devices. The monolayer transition metal dichalcogenides (TMDs) with sizable band gaps show promise in building p-n junctions (couples) for TFET applications. Band alignment information is essential for realizing broken gap junctions with excellent electron tunneling efficiencies. Promising couples composed of monolayer TMDs are suggested to be VIB-MeX2 (Me = W, Mo; X = Te, Se) as the n-type source and IVB-MeX2 (Me = Zr, Hf; X = S, Se) as the p-type drain by density functional theory calculations. (C) 2013 AIP Publishing LLC.

引用

页数：4

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