共 29 条
Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures
被引:2190
作者:

Britnell, L.
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Manchester, Sch Phys & Astron, Manchester M13 9PL, Lancs, England Univ Manchester, Sch Phys & Astron, Manchester M13 9PL, Lancs, England

Gorbachev, R. V.
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h-index: 0
机构:
Univ Manchester, Manchester Ctr Mesosci & Nanotechnol, Manchester M13 9PL, Lancs, England Univ Manchester, Sch Phys & Astron, Manchester M13 9PL, Lancs, England

Jalil, R.
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h-index: 0
机构:
Univ Manchester, Manchester Ctr Mesosci & Nanotechnol, Manchester M13 9PL, Lancs, England Univ Manchester, Sch Phys & Astron, Manchester M13 9PL, Lancs, England

Belle, B. D.
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机构:
Univ Manchester, Manchester Ctr Mesosci & Nanotechnol, Manchester M13 9PL, Lancs, England Univ Manchester, Sch Phys & Astron, Manchester M13 9PL, Lancs, England

Schedin, F.
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Univ Manchester, Manchester Ctr Mesosci & Nanotechnol, Manchester M13 9PL, Lancs, England Univ Manchester, Sch Phys & Astron, Manchester M13 9PL, Lancs, England

Mishchenko, A.
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Univ Manchester, Sch Phys & Astron, Manchester M13 9PL, Lancs, England Univ Manchester, Sch Phys & Astron, Manchester M13 9PL, Lancs, England

Georgiou, T.
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Univ Manchester, Sch Phys & Astron, Manchester M13 9PL, Lancs, England Univ Manchester, Sch Phys & Astron, Manchester M13 9PL, Lancs, England

Katsnelson, M. I.
论文数: 0 引用数: 0
h-index: 0
机构:
Radboud Univ Nijmegen, Inst Mol & Mat, NL-6525 AJ Nijmegen, Netherlands Univ Manchester, Sch Phys & Astron, Manchester M13 9PL, Lancs, England

Eaves, L.
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h-index: 0
机构:
Univ Nottingham, Sch Phys & Astron, Nottingham NG7 2RD, England Univ Manchester, Sch Phys & Astron, Manchester M13 9PL, Lancs, England

Morozov, S. V.
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h-index: 0
机构:
Russian Acad Sci, Inst Microelect Technol, Chernogolovka 142432, Russia Univ Manchester, Sch Phys & Astron, Manchester M13 9PL, Lancs, England

Peres, N. M. R.
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Minho, Dept Fis, P-4710057 Braga, Portugal
Natl Univ Singapore, Graphene Res Ctr, Singapore 117542, Singapore
Natl Univ Singapore, Dept Phys, Singapore 117542, Singapore Univ Manchester, Sch Phys & Astron, Manchester M13 9PL, Lancs, England

Leist, J.
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h-index: 0
机构:
Moment Performance Mat, Strongsville, OH 44070 USA Univ Manchester, Sch Phys & Astron, Manchester M13 9PL, Lancs, England

Geim, A. K.
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Manchester, Sch Phys & Astron, Manchester M13 9PL, Lancs, England
Univ Manchester, Manchester Ctr Mesosci & Nanotechnol, Manchester M13 9PL, Lancs, England Univ Manchester, Sch Phys & Astron, Manchester M13 9PL, Lancs, England

Novoselov, K. S.
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Manchester, Sch Phys & Astron, Manchester M13 9PL, Lancs, England Univ Manchester, Sch Phys & Astron, Manchester M13 9PL, Lancs, England

Ponomarenko, L. A.
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h-index: 0
机构:
Univ Manchester, Sch Phys & Astron, Manchester M13 9PL, Lancs, England Univ Manchester, Sch Phys & Astron, Manchester M13 9PL, Lancs, England
机构:
[1] Univ Manchester, Sch Phys & Astron, Manchester M13 9PL, Lancs, England
[2] Univ Manchester, Manchester Ctr Mesosci & Nanotechnol, Manchester M13 9PL, Lancs, England
[3] Radboud Univ Nijmegen, Inst Mol & Mat, NL-6525 AJ Nijmegen, Netherlands
[4] Univ Nottingham, Sch Phys & Astron, Nottingham NG7 2RD, England
[5] Russian Acad Sci, Inst Microelect Technol, Chernogolovka 142432, Russia
[6] Univ Minho, Dept Fis, P-4710057 Braga, Portugal
[7] Natl Univ Singapore, Graphene Res Ctr, Singapore 117542, Singapore
[8] Natl Univ Singapore, Dept Phys, Singapore 117542, Singapore
[9] Moment Performance Mat, Strongsville, OH 44070 USA
来源:
基金:
瑞士国家科学基金会;
英国工程与自然科学研究理事会;
欧洲研究理事会;
关键词:
HEXAGONAL BORON-NITRIDE;
HIGH-FREQUENCY;
ELECTRONICS;
TRANSPORT;
DEVICES;
CARBON;
STATE;
GATE;
D O I:
10.1126/science.1218461
中图分类号:
O [数理科学和化学];
P [天文学、地球科学];
Q [生物科学];
N [自然科学总论];
学科分类号:
07 ;
0710 ;
09 ;
摘要:
An obstacle to the use of graphene as an alternative to silicon electronics has been the absence of an energy gap between its conduction and valence bands, which makes it difficult to achieve low power dissipation in the OFF state. We report a bipolar field-effect transistor that exploits the low density of states in graphene and its one-atomic-layer thickness. Our prototype devices are graphene heterostructures with atomically thin boron nitride or molybdenum disulfide acting as a vertical transport barrier. They exhibit room-temperature switching ratios of approximate to 50 and approximate to 10,000, respectively. Such devices have potential for high-frequency operation and large-scale integration.
引用
收藏
页码:947 / 950
页数:4
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