Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures

被引:2190
作者
Britnell, L. [1 ]
Gorbachev, R. V. [2 ]
Jalil, R. [2 ]
Belle, B. D. [2 ]
Schedin, F. [2 ]
Mishchenko, A. [1 ]
Georgiou, T. [1 ]
Katsnelson, M. I. [3 ]
Eaves, L. [4 ]
Morozov, S. V. [5 ]
Peres, N. M. R. [6 ,7 ,8 ]
Leist, J. [9 ]
Geim, A. K. [1 ,2 ]
Novoselov, K. S. [1 ]
Ponomarenko, L. A. [1 ]
机构
[1] Univ Manchester, Sch Phys & Astron, Manchester M13 9PL, Lancs, England
[2] Univ Manchester, Manchester Ctr Mesosci & Nanotechnol, Manchester M13 9PL, Lancs, England
[3] Radboud Univ Nijmegen, Inst Mol & Mat, NL-6525 AJ Nijmegen, Netherlands
[4] Univ Nottingham, Sch Phys & Astron, Nottingham NG7 2RD, England
[5] Russian Acad Sci, Inst Microelect Technol, Chernogolovka 142432, Russia
[6] Univ Minho, Dept Fis, P-4710057 Braga, Portugal
[7] Natl Univ Singapore, Graphene Res Ctr, Singapore 117542, Singapore
[8] Natl Univ Singapore, Dept Phys, Singapore 117542, Singapore
[9] Moment Performance Mat, Strongsville, OH 44070 USA
基金
瑞士国家科学基金会; 英国工程与自然科学研究理事会; 欧洲研究理事会;
关键词
HEXAGONAL BORON-NITRIDE; HIGH-FREQUENCY; ELECTRONICS; TRANSPORT; DEVICES; CARBON; STATE; GATE;
D O I
10.1126/science.1218461
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
An obstacle to the use of graphene as an alternative to silicon electronics has been the absence of an energy gap between its conduction and valence bands, which makes it difficult to achieve low power dissipation in the OFF state. We report a bipolar field-effect transistor that exploits the low density of states in graphene and its one-atomic-layer thickness. Our prototype devices are graphene heterostructures with atomically thin boron nitride or molybdenum disulfide acting as a vertical transport barrier. They exhibit room-temperature switching ratios of approximate to 50 and approximate to 10,000, respectively. Such devices have potential for high-frequency operation and large-scale integration.
引用
收藏
页码:947 / 950
页数:4
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