High-Frequency Graphene Voltage Amplifier

被引:156
作者
Han, Shu-Jen [1 ]
Jenkins, Keith A. [1 ]
Garcia, Alberto Valdes [1 ]
Franklin, Aaron D. [1 ]
Bol, Ageeth A. [1 ]
Haensch, Wilfried [1 ]
机构
[1] IBM Corp, Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA
关键词
Graphene; amplifier; circuit; voltage gain; current saturation; TRANSISTORS; TRANSPORT;
D O I
10.1021/nl2016637
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
While graphene transistors have proven capable of delivering gigahertz-range cutoff frequencies, applying the devices to RF circuits has been largely hindered by the lack of current saturation in the zero band gap graphene. Herein, the first high-frequency voltage amplifier is demonstrated using large-area chemical vapor deposition grown graphene. The graphene field-effect transistor (GFET) has a 6-finger gate design with gate length of 500 nm. The graphene common-source amplifier exhibits similar to 5 dB low frequency gain with the 3 dB bandwidth greater than 6 GHz. This first AC voltage gain demonstration of a GFET is attributed to the clear current saturation in the device, which is enabled by an ultrathin gate dielectric (4 nm HfO2) of the embedded gate structures. The device also shows extrinsic transconductance of 1.2 mS/mu m at 1 V drain bias, the highest for graphene FETs using large-scale graphene reported to date.
引用
收藏
页码:3690 / 3693
页数:4
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