Enhanced Logic Performance with Semiconducting Bilayer Graphene Channels

被引：40

作者：

Li, Song-Lin ^{[1
]}

Miyazaki, Hisao ^{[1
,2
]}

Hiura, Hidefumi ^{[1
,3
]}

Liu, Chuan ^{[1
]}

Tsukagoshi, Kazuhito ^{[1
,2
]}

机构：

[1] Natl Inst Mat Sci, Int Ctr Mat Nanoarchitecton MANA, Tsukuba, Ibaraki 3050044, Japan

[2] Japan Sci & Technol Agcy, CREST, Kawaguchi, Saitama 3320012, Japan

[3] NEC Corp Ltd, Green Innovat Res Labs, Tsukuba, Ibaraki 3058501, Japan

来源：

ACS NANO | 2011年 / 5卷 / 01期

基金：

日本学术振兴会;

关键词：

graphene; energy gap; field-effect transistor; logic gate; nanoelectronics; BANDGAP; TRANSISTORS;

D O I：

10.1021/nn102346b

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Realization of logic circuits in graphene with an energy gap (EG) remains one of the main, challenges for graphene electronics. We found that large transport EGs (>100 meV) can be fulfilled in dual-gated bilayer graphene underneath a simple alumina passivation top gate stack, which directly contacts the graphene channels without an inserted buffer layer. With the presence of EGs, the electrical properties of the graphene transistors are significantly enhanced, as manifested by enhanced on/off current ratio, subthreshold slope, and current saturation. For the first time complementary-like semiconducting logic graphene inverters are demonstrated that show a large improvement over their metallic counterparts. This result may open the way for logic applications of gap engineered graphene.

引用

页码：500 / 506

页数：7

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