Temperature-dependent transport in suspended graphene

被引：966

作者：

Bolotin, K. I. ^{[1
]}

Sikes, K. J. ^{[2
]}

Hone, J. ^{[3
]}

Stormer, H. L. ^{[1
,2
,4
]}

Kim, P. ^{[1
]}

机构：

[1] Columbia Univ, Dept Phys, New York, NY 10027 USA

[2] Columbia Univ, Dept Appl Phys, New York, NY 10027 USA

[3] Columbia Univ, Dept Mech Engn, New York, NY 10027 USA

[4] Bell Labs, Alcatel Lucent Technol, Murray Hill, NJ 07974 USA

来源：

PHYSICAL REVIEW LETTERS | 2008年 / 101卷 / 09期

关键词：

D O I：

10.1103/PhysRevLett.101.096802

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The resistivity of ultraclean suspended graphene is strongly temperature (T) dependent for 5 < T < 240 K. At T similar to 5 K transport is near-ballistic in a device of similar to 2 Am dimension and a mobility similar to 170 000 cm(2)/V s. At large carrier density, n > 0.5 X 10(11) cm(-2), the resistivity increases with increasing T and is linear above 50 K, suggesting carrier scattering from acoustic phonons. At T = 240 K the mobility is similar to 120000 cm(2)/V s, higher than in any known semiconductor. At the charge neutral point we observe a nonuniversal conductivity that decreases with decreasing T, consistent with a density inhomogeneity < 108 cm(-2).

引用

页数：4

共 26 条

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