Channel-Length-Dependent Transport Behaviors of Graphene Field-Effect Transistors

被引：67

作者：

Han, Shu-Jen ^{[1
]}

Chen, Zhihong ^{[2
]}

Bol, Ageeth A. ^{[1
]}

Sun, Yanning ^{[1
]}

机构：

[1] IBM TJ Watson Res Ctr, Yorktown Hts, NY 10598 USA

[2] Purdue Univ, W Lafayette, IN 47907 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2011年 / 32卷 / 06期

关键词：

Chemical vapor deposition (CVD) graphene; Dirac point; graphene field-effect transistor (GFET); short-channel effect;

D O I：

10.1109/LED.2011.2131113

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This letter presents a detailed study of transport in graphene field-effect transistors (GFETs) with various channel lengths, from 5 mu m down to 90 nm, using transferred graphene grown by chemical vapor deposition. An electron-hole asymmetry observed in short-channel devices suggests a strong impact from graphene/metal contacts. In addition, for the first time, we observe a shift of the gate voltage at the Dirac point in graphene devices as a consequence of gate length scaling. The unusual shift of the Dirac point voltage has been identified as one of the signatures of short-channel effects in GFETs.

引用

页码：812 / 814

页数：3

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