A graphene field-effect device

被引：829

作者：

Lemme, Max C. ^{[1
]}

Echtermeyer, Tim J.

Baus, Matthias

Kurz, Heinrich

机构：

[1] AMO GmbH, AMICA, D-52074 Aachen, Germany

[2] Univ Aachen, Rhein Westfal TH Aachen, Inst Semicond Elect, D-52074 Aachen, Germany

来源：

IEEE ELECTRON DEVICE LETTERS | 2007年 / 28卷 / 04期

关键词：

field effect; graphene; mobility; MOSFET; transistor;

D O I：

10.1109/LED.2007.891668

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, a top-gated field-effect device (FED) manufactured from monolayer graphene is investigated. Except for graphene deposition, a conventional top-down CMOS-compatible process flow is applied. Carrier mobilities in graphene pseudo-MOS structures are compared to those obtained from the top-gated Graphene-FEDs. The extracted values exceed the universal mobility of silicon and silicon-on-insulator MOSFETs.

引用

页码：282 / 284

页数：3

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