Fine structure in the alpha decay of Bi-189

被引：23

作者：

Wauters, J

Batchelder, JC

Bingham, CR

Blumenthal, DJ

Brown, LT

Conticchio, LF

Davids, CN

Davinson, T

Irvine, RJ

Seweryniak, D

Toth, KS

Walters, WB

Woods, PJ

Zganjr, EF

机构：

[1] LOUISIANA STATE UNIV, BATON ROUGE, LA 70803 USA

[2] OAK RIDGE NATL LAB, OAK RIDGE, TN 37831 USA

[3] ARGONNE NATL LAB, ARGONNE, IL 60439 USA

[4] VANDERBILT UNIV, NASHVILLE, TN 37235 USA

[5] UNIV MARYLAND, COLLEGE PK, MD 20742 USA

[6] UNIV EDINBURGH, EDINBURGH EH9 3JZ, MIDLOTHIAN, SCOTLAND

来源：

PHYSICAL REVIEW C | 1997年 / 55卷 / 03期

关键词：

D O I：

10.1103/PhysRevC.55.1192

中图分类号：

O57 [原子核物理学、高能物理学];

学科分类号：

070202 ;

摘要：

A detailed alpha-decay study was performed for Bi-189m,Bi-g produced in the reaction of Mo-95 on Mo-96 at 418 MeV. Evaporation residues were selected in-flight using the Argonne fragment mass analyzer and implanted into a double sided silicon strip detector. The correlation technique between implants and subsequent decays was used to observe new weak alpha branches of Bi-189 to excited states in Tl-185. A more precise value of 182(8) keV for the excitation energy of the pi s(1/2) intruder state in Bi-189 was determined. The alpha decay of the Bi-189(9/2(-)) ground state to the pi d(3/2) level at 284 keV was observed for the first time. In addition, the alpha decay of Bi-188 was remeasured. Reduced widths for the alpha decays of odd-A Bi-189-197m,Bi-g nuclei to states in their Tl daughters are discussed.

引用

页码：1192 / 1196

页数：5

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