Thermomechanical distortions of advanced optical reticles during exposure

被引:14
作者
Chang, J [1 ]
Abdo, A [1 ]
Kim, B [1 ]
Bloomstein, T [1 ]
Engelstad, R [1 ]
Lovell, E [1 ]
Beekman, W [1 ]
Mitchell, J [1 ]
机构
[1] Univ Wisconsin, Computat Mech Ctr, Madison, WI 53706 USA
来源
EMERGING LITHOGRAPHIC TECHNOLOGIES III, PTS 1 AND 2 | 1999年 / 3676卷
关键词
optical lithography; reticle; thermomechanical distortions; finite element analysis;
D O I
10.1117/12.351144
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
If optical lithography is to be extended into the 157 nm regime, controlling mask-related distortions will be a necessity. Thermomechanical distortions during exposure could be a major source of pattern placement error, especially if alternative materials such as CaF2 or MgF2 are employed. Full three-dimensional finite element (FE) heat transfer and structural models have been developed to simulate the response of the reticle during both full-field and scanning exposure systems. Transient and periodic steady-state temperature distributions have been determined for typical exposure duty cycles. Corresponding in-plane and out-of-plane thermal distortions have been identified for both fused silica and calcium fluoride substrates. Under equivalent exposure conditions, the distortions in the CaF2 are significantly higher.
引用
收藏
页码:756 / 767
页数:2
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