Critical issues in 157 nm lithography

被引：82

作者：

Bloomstein, TM ^{[1
]}

Rothschild, M ^{[1
]}

Kunz, RR ^{[1
]}

Hardy, DE ^{[1
]}

Goodman, RB ^{[1
]}

Palmacci, ST ^{[1
]}

机构：

[1] MIT, Lincoln Lab, Lexington, MA 02420 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1998年 / 16卷 / 06期

关键词：

D O I：

10.1116/1.590455

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Projection Lithography at 157 nm is a candidate technology for the 100-70 nm generations, and possibly beyond. It would provide an evolutionary extension to the current primary photolithographic processes and components: excimer lasers, refractive optics, and transmissive masks. This article presents data on the transmission of optical materials at 157 nm, the performance of optical coatings, the issues that must be faced by photomasks, and the considerations related to engineering resists at this wavelength. (C) 1998 American Vacuum Society. [S0734-211X(98)19506-9].

引用

页码：3154 / 3157

页数：4

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