Origin of the stability of Ge(105) on Si: A new structure model and surface strain relaxation

被引：96

作者：

Fujikawa, Y ^{[1
]}

Akiyama, K

Nagao, T

Sakurai, T

Lagally, MG

Hashimoto, T

Morikawa, Y

Terakura, K

机构：

[1] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan

[2] Univ Wisconsin, Madison, WI 53706 USA

[3] Natl Inst Adv Ind Sci & Technol, Res Inst Computat Sci, Tsukuba, Ibaraki 3058568, Japan

[4] Natl Inst Adv Ind Sci & Technol, Res Consortium Synthet Nanofunct Mat Project, Tsukuba, Ibaraki 3058568, Japan

[5] Japan Adv Inst Sci & Technol, Sch Mat Sci, Tatsunokuchi, Ishikawa 9231292, Japan

来源：

PHYSICAL REVIEW LETTERS | 2002年 / 88卷 / 17期

关键词：

D O I：

10.1103/PhysRevLett.88.176101

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The structure of Ge(105)-(1 x 2) grown on Si(105) is examined by scanning tunneling microscopy (STM) and first-principles calculations. The morphology evolution with an increasing amount of Ge deposited documents the existence of a tensile surface strain in Si(105) and its relaxation with increasing coverage of Ge. A detailed analysis of high-resolution STM images and first-principles calculations produce a new stable model for the Ge(105)-(1 x 2) structure formed on the Si(105) surface that includes the existence of surface strain. It corrects the model developed from early observations of the facets of "hut" clusters grown on Si(001).

引用

页码：4 / 176101

页数：4

共 25 条

[1] SPONTANEOUS FORMATION OF STRESS DOMAINS ON CRYSTAL-SURFACES [J].

ALERHAND, OL ;

VANDERBILT, D ;

MEADE, RD ;

JOANNOPOULOS, JD .

PHYSICAL REVIEW LETTERS, 1988, 61 (17) :1973-1976

[2] STABILITIES OF SINGLE-LAYER AND BILAYER STEPS ON SI(001) SURFACES [J].

CHADI, DJ .

PHYSICAL REVIEW LETTERS, 1987, 59 (15) :1691-1694

[3] Influence of molecular hydrogen on Ge island nucleation on Si(001) [J].

Dentel, D ;

Vescan, L ;

Chrétien, O ;

Holländer, B .

JOURNAL OF APPLIED PHYSICS, 2000, 88 (09) :5113-5118

[4] SiGe island shape transitions induced by elastic repulsion [J].

Floro, JA ;

Lucadamo, GA ;

Chason, E ;

Freund, LB ;

Sinclair, M ;

Twesten, RD ;

Hwang, RQ .

PHYSICAL REVIEW LETTERS, 1998, 80 (21) :4717-4720

[5]

FUJIKAWA Y, IN PRESS

[6] Atomic structure of high-index Ge surfaces consisting of periodic nanoscale facets [J].

Gai, Z ;

Zhao, RG ;

Ji, H ;

Li, XW ;

Yang, WS .

PHYSICAL REVIEW B, 1997, 56 (19) :12308-12315

[7] Heteroepitaxy of germanium on Si(103) and stable surfaces of germanium [J].

Gai, Z ;

Yang, WS ;

Sakurai, T ;

Zhao, RG .

PHYSICAL REVIEW B, 1999, 59 (20) :13009-13013

[8] STEPS ON SI(001) [J].

GRIFFITH, JE ;

KOCHANSKI, GP ;

KUBBY, JA ;

WIERENGA, PE .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1989, 7 (03) :1914-1918

[9]

HASHIMOTO T, IN PRESS SURF SCI

[10] Hydrogen-surfactant mediated growth of Ge on Si(001) [J].

Kahng, SJ ;

Ha, YH ;

Park, JY ;

Kim, S ;

Moon, DW ;

Kuk, Y .

PHYSICAL REVIEW LETTERS, 1998, 80 (22) :4931-4934

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