Influence of molecular hydrogen on Ge island nucleation on Si(001)

被引：9

作者：

Dentel, D ^{[1
]}

Vescan, L ^{[1
]}

Chrétien, O ^{[1
]}

Holländer, B ^{[1
]}

机构：

[1] Forschungszentrum Julich, Inst Schicht & Ionentech, D-52425 Julich, Germany

来源：

JOURNAL OF APPLIED PHYSICS | 2000年 / 88卷 / 09期

关键词：

D O I：

10.1063/1.1317245

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The influence of molecular hydrogen (H(2)) on the structural and optical properties of self-assembled Ge dots grown on Si(001) has been studied using atomic force microscopy and photoluminescence spectroscopy (PL). Without hydrogen, a well known bimodal island size distribution occurs with small {105} faceted pyramids, and larger multifaceted domes. In the presence of an additional H(2) flow, we observe that a higher density of smaller pyramids and a lower density of domes occurs. Moreover, in the presence of hydrogen, PL investigations have revealed a thicker wetting layer thickness, probably due to a reduction of the surface diffusion length. (C) 2000 American Institute of Physics. [S0021-8979(00)07822-1].

引用

页码：5113 / 5118

页数：6

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