Morphological transition of Ge islands on Si(001) grown by LPCVD

被引：9

作者：

Goryll, M ^{[1
]}

Vescan, L ^{[1
]}

Lüth, H ^{[1
]}

机构：

[1] Forschungszentrum Julich, Inst Schicht & Ionentech, D-52425 Julich, Germany

来源：

EPITAXIAL GROWTH-PRINCIPLES AND APPLICATIONS | 1999年 / 570卷

关键词：

D O I：

10.1557/PROC-570-205

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Hut- and dome-shaped islands have been observed during low-pressure vapour phase epitaxy (LPVPE) of Ge on Si(001) at 700 degrees C. The experiments show that a coarsening process occurs in connection with the deposition process, leading to an island height increase with increasing deposition time (total Ge-coverage was kept constant). The shape transition from huts to domes, which takes place after hut clusters have reached a baselength of 80nm, indicates that huts are not a stable configuration. Photoluminescence measurements show a linear correlation between hut cluster density and integrated photoluminescence intensity.

引用

页码：205 / 211

页数：7

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