PHOTOLUMINESCENCE AND ELECTROLUMINESCENCE OF SIGE DOTS FABRICATED ISLAND GROWTH

被引：241

作者：

APETZ, R

VESCAN, L

HARTMANN, A

DIEKER, C

LUTH, H

机构：

[1] Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich

来源：

APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 04期

关键词：

D O I：

10.1063/1.114051

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present a study of photo- and electroluminescence of SiGe dots buried in Si and compare them with structures containing smooth SiGe layers. The SiGe dot structures were fabricated by low-pressure chemical vapor deposition using the Stranski-Krastanov growth mode (island growth). We show that the localization of excitons in the dots leads to an increase of the luminescence efficiency at low excitation compared to smooth SiGe layers (e.g., quantum wells). At higher excitation the efficiency decreases which is attributed to nonradiative Auger recombination processes in the dots. © 1995 American Institute of Physics.

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页码：445 / 447

页数：3

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