ELECTROLUMINESCENCE AT ROOM-TEMPERATURE OF A SINGEM STRAINED-LAYER SUPERLATTICE

被引：57

作者：

ENGVALL, J ^{[1
]}

OLAJOS, J ^{[1
]}

GRIMMEISS, HG ^{[1
]}

PRESTING, H ^{[1
]}

KIBBEL, H ^{[1
]}

KASPER, E ^{[1
]}

机构：

[1] DAIMLER BENZ AG,RES CTR,W-7900 ULM,GERMANY

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 04期

关键词：

D O I：

10.1063/1.110780

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report for the first time on room temperature electroluminescence in the region 1.3-1.7 mum from a strain-adjusted Si6Ge4 superlattice. These results, together with photoluminescence, short-circuit photocurrent spectroscopy, and voltage-intensity and current-intensity measurements indicate that the observed electroluminescence consists of two emission bands which are believed to be caused by defect and interband recombination processes.

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页码：491 / 493

页数：3

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