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BAND-GAP OF STRAIN-SYMMETRIZED, SHORT-PERIOD SI/GE SUPERLATTICES

被引：27
作者：
OLAJOS, J
ENGVALL, J
GRIMMEISS, HG
MENCZIGAR, U
ABSTREITER, G
KIBBEL, H
KASPER, E
PRESTING, H
机构：
[1] TECH UNIV MUNICH,WALTER SCHOTTKY INST,W-8046 GARCHING,GERMANY
[2] DAIMLER BENZ RES CTR,W-7900 ULM,GERMANY
来源：
PHYSICAL REVIEW B | 1992年 / 46卷 / 19期
关键词：
D O I：
10.1103/PhysRevB.46.12857
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We report an identification and determination of the band-gap energies in a series of strain-symmetrized Si(n)/Ge(n) superlattices. Absorption onsets are observed that shift toward higher energies with decreasing period length in superlattices with identical Si/Ge ratio. Band-gap energies of 0.67, 0.76, and 0.88 eV for Si6/Ge6, Si5/Ge5, and Si4/Ge4 superlattices, respectively, are determined by a fitting procedure. Strong photoluminescence and electroluminescence are observed for the Si5/Ge5 superlattices. The energetic position indicates that the luminescence is related to interband transitions.
引用
收藏
页码：12857 / 12860
页数：4
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