Coarsening of self-assembled Ge quantum dots on Si(001)

被引：650

作者：

Ross, FM ^{[1
]}

Tersoff, J ^{[1
]}

Tromp, RM ^{[1
]}

机构：

[1] IBM Corp, Div Res, Thomas J Watson Res Ctr, Yorktown Heights, NY 10598 USA

来源：

PHYSICAL REVIEW LETTERS | 1998年 / 80卷 / 05期

关键词：

D O I：

10.1103/PhysRevLett.80.984

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The size distribution of self-assembled heteroepitaxial islands is critical to their application as quantum dots in novel devices, In situ, real time UHV transmission electron microscopy studies of Ge island growth on Si(001) show that island coarsening occurs even during growth. With increasing volume, a shape transition from pyramids to domes gives rise to an abrupt change in chemical potential. This leads to a bifurcation in the size distribution and ultimately to a narrow size range. Simulations of coarsening in the presence of a shape transition are in good agreement with experimental results. [S0031-9007(97)05174-0].

引用

页码：984 / 987

页数：4

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