New insights into the kinetics of the stress-driven two-dimensional to three-dimensional transition

被引：16

作者：

Chen, KM ^{[1
]}

Jesson, DE ^{[1
]}

Pennycook, SJ ^{[1
]}

Thundat, T ^{[1
]}

Warmack, RJ ^{[1
]}

机构：

[1] OAK RIDGE NATL LAB,HLTH SCI RES DIV,OAK RIDGE,TN 37831

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1996年 / 14卷 / 03期

关键词：

D O I：

10.1116/1.588899

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have systematically investigated the morphological evolution of Ge0.5Si0.5 strained films during postdeposition annealing. The changes of the surface structure are found to follow the kinetic route of strain relaxation at different stages. A number of interesting features are revealed, which include the existence of an energy barrier to the two-dimensional/three-dimensional (2D/3D) transition, and a self-limiting effect in the growth kinetics of strained 3D islands. We demonstrate that the annealing approach provides a new way to grow coherent islands with uniform size. (C) 1996 American Vacuum Society.

引用

页码：2199 / 2202

页数：4

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