Critical nuclei shapes in the stress-driven 2D-to-3D transition

被引:67
作者
Chen, KM [1 ]
Jesson, DE [1 ]
Pennycook, SJ [1 ]
Thundat, T [1 ]
Warmack, RJ [1 ]
机构
[1] OAK RIDGE NATL LAB, HLTH SCI RES DIV, OAK RIDGE, TN 37831 USA
关键词
D O I
10.1103/PhysRevB.56.R1700
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We investigate the kinetic pathways to coherent island formation during the stress-driven roughening of strained films, and specifically examine the role of facets during island nucleation. Despite the ubiquitous appearance of {501} facets in the Si-Ge system, we show that for Ge0.5Si0.5 strained layers, the initial islanding pathway does not involve discrete {501} facets. A kinetic model based on interacting surface steps is developed, which explains the observed pathway and is consistent with the sensitive dependence of the 2D-3D transition on temperature and the sign of misfit.
引用
收藏
页码:R1700 / R1703
页数:4
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