STEP INSTABILITIES - A NEW KINETIC ROUTE TO 3D GROWTH

被引：33

作者：

CHEN, KM ^{[1
]}

JESSON, DE ^{[1
]}

PENNYCOOK, SJ ^{[1
]}

MOSTOLLER, M ^{[1
]}

KAPLAN, T ^{[1
]}

THUNDAT, T ^{[1
]}

WARMACK, RJ ^{[1
]}

机构：

[1] OAK RIDGE NATL LAB, DIV HLTH SCI RES, OAK RIDGE, TN 37831 USA

来源：

PHYSICAL REVIEW LETTERS | 1995年 / 75卷 / 08期

关键词：

D O I：

10.1103/PhysRevLett.75.1582

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Atomic force microscopy studies of Ge/Si(001) molecular beam epitaxy growth reveal a crucial new role of surface steps in the 2D to 3D transition. At or near step flow we show that S-A steps undergo a stress-driven triangular step instability. The resulting spatial variation of surface strain, although small, can dramatically influence the activation barrier for 3D island nucleation. This provides a surprising kinetic route for the onset of 3D growth associated with the apex regions of triangular steps.

引用

页码：1582 / 1585

页数：4

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