Stability of amorphous-silicon TFTs deposited on clear plastic substrates at 250 °C to 280 °C

被引：80

作者：

Long, K ^{[1
]}

Kattamis, AZ ^{[1
]}

Cheng, IC ^{[1
]}

Gleskova, H ^{[1
]}

Wagner, S ^{[1
]}

Sturm, JC ^{[1
]}

机构：

[1] Princeton Univ, Dept Elect Engn, PRISM, Princeton, NJ 08544 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2006年 / 27卷 / 02期

关键词：

amorphous-silicon (a-Si); device stability; flexible; plastic substrate; thin-film transistor (TFT);

D O I：

10.1109/LED.2005.863147

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Amorphous-silicon (a-Si) thin-film transistors (TFTs) were fabricated on a free-standing new clear plastic substrate with high glass transition temperature (T-g) of > 315 degrees C and low coefficient of thermal expansion of < 10 ppm/degrees C. Maximum process temperatures on the substrates were 250 degrees C and 280 degrees C, close to the temperatures used in industrial a-Si TFT production on glass substrates. The first TFTs made at 280 degrees C have dc characteristics comparable to TFTs made on glass. The stability of the 250 degrees C TFTs on clear plastic is approaching that of TFTs made on glass at 300 degrees C-350 degrees C. TFT characteristics and stability depend only on process temperature and not on substrate type.

引用

页码：111 / 113

页数：3

共 11 条

[1] The reliability of amorphous silicon thin film transistors for LCD under DC and AC stresses [J].

Cheng, HC ;

Huang, CY ;

Lin, JW ;

Kung, JJH .

1998 5TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY PROCEEDINGS, 1998, :834-837

[2] a-Si:H TFTs made on polyimide foil by PE-CVD at 150°C [J].

Gleskova, H ;

Wagner, S ;

Suo, Z .

FLAT-PANEL DISPLAY MATERIALS-1998, 1998, 508 :73-78

[3] DC-gate-bias stressing of a-Si : H TFTs fabricated at 150°C on polyimide foil [J].

Gleskova, H ;

Wagner, S .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2001, 48 (08) :1667-1671

[4] CHARACTERIZATION OF INSTABILITY IN AMORPHOUS-SILICON THIN-FILM TRANSISTORS [J].

KANEKO, Y ;

SASANO, A ;

TSUKADA, T .

JOURNAL OF APPLIED PHYSICS, 1991, 69 (10) :7301-7305

[5] BIAS-STRESS-INDUCED STRETCHED-EXPONENTIAL TIME-DEPENDENCE OF CHARGE INJECTION AND TRAPPING IN AMORPHOUS THIN-FILM TRANSISTORS [J].

LIBSCH, FR ;

KANICKI, J .

APPLIED PHYSICS LETTERS, 1993, 62 (11) :1286-1288

[6]

LONG K, 2004, P 62 DEV RES C, P89

[7]

STRIAKHILEV D, 2002, J VAC SCI TECHNOL A, V20, P1087

[8]

THOMASSON DB, 1998, P 56 DEV RES C, P126

[9]

Tsukada T., 2000, Technology and Application of Amorphous Silicon, P7

[10]

WAGNER S, 2000, TECHNOLOGY APPL AMOR, V37, P222

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