Complex structural phase transition in a defect-populated two-dimensional system

被引:13
作者
Melechko, AV [1 ]
Simkin, MV
Samatova, NF
Braun, J
Plummer, EW
机构
[1] Univ Tennessee, Dept Phys & Astron, Knoxville, TN 37996 USA
[2] Oak Ridge Natl Lab, Div Solid State, Oak Ridge, TN 37831 USA
[3] Oak Ridge Natl Lab, Div Math & Comp Sci, Oak Ridge, TN 37831 USA
关键词
D O I
10.1103/PhysRevB.64.235424
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A complex phase transition in Sri/Ge(111) and similar systems can be decomposed into two intertwined phase transitions: a structural symmetry lowering (root3 x root3) double left right arrow (3x3) transition and a disorder-order transition in the defect distribution, We present two phenomenological models that describe these transitions and their interrelation. These models allow us to understand the formation of domains and domain walls at low temperatures, defect-induced density waves above the structural transition temperature, and ordering of the defects caused by lattice-mediated defect-defect interactions. The models predict a destruction of the pure structural transition when impurities are introduced into the system, a shift in the structural crossover temperature with impurity density. and a dependence of the (3x3) lattice structure on the specific defect alignment.
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页数:12
相关论文
共 38 条
[1]   Dynamical fluctuations as the origin of a surface phase transition in Sn/Ge(III) [J].
Avila, J ;
Mascaraque, A ;
Michel, EG ;
Asensio, MC ;
LeLay, G ;
Ortega, J ;
Pérez, R ;
Flores, F .
PHYSICAL REVIEW LETTERS, 1999, 82 (02) :442-445
[2]  
AVILA JFM, UNPUB
[3]   QUASI-REGULAR IMPURITY DISTRIBUTION DRIVEN BY A CHARGE-DENSITY-WAVE [J].
BALDEA, I ;
BADESCU, M .
PHYSICAL REVIEW B, 1993, 48 (12) :8619-8628
[4]   Phase transitions in two dimensions: The case of Sn adsorbed on Ge(111) surfaces [J].
Bunk, O ;
Zeysing, JH ;
Falkenberg, G ;
Johnson, RL ;
Nielsen, M ;
Nielsen, MM ;
Feidenhans, R .
PHYSICAL REVIEW LETTERS, 1999, 83 (11) :2226-2229
[5]   Charge rearrangement in the GexPb1-x/Ge(111) interface [J].
Carpinelli, JM ;
Weitering, HH ;
Plummer, EW .
SURFACE SCIENCE, 1998, 401 (03) :L457-L463
[6]   Surface charge ordering transition: alpha phase of Sn/Ge(111) [J].
Carpinelli, JM ;
Weitering, HH ;
Bartkowiak, M ;
Stumpf, R ;
Plummer, EW .
PHYSICAL REVIEW LETTERS, 1997, 79 (15) :2859-2862
[7]   Direct observation of a surface charge density wave [J].
Carpinelli, JM ;
Weitering, HH ;
Plummer, EW ;
Stumpf, R .
NATURE, 1996, 381 (6581) :398-400
[8]   Photoelectron diffraction study of the (3x3)-Sn/Ge(111) structure [J].
Floreano, L ;
Petaccia, L ;
Benes, M ;
Cvetko, D ;
Goldoni, A ;
Gotter, R ;
Grill, L ;
Morgante, A ;
Verdini, A ;
Modesti, S .
SURFACE REVIEW AND LETTERS, 1999, 6 (06) :1091-1096
[9]   Many-body effects and the metal-insulator transition at semiconductor surfaces and interfaces [J].
Flores, F ;
Ortega, J ;
Pérez, R .
SURFACE REVIEW AND LETTERS, 1999, 6 (3-4) :411-433
[10]  
Ginzburg V.L., 1950, ZH EKSP TEOR FIZ+, V20, P1064, DOI DOI 10.1007/978-3-540-68008-6_4